Mini-Circuits has introduced two new GaN-on-SiC HEMT MMIC power amplifiers, GNA-63-5W+ and GNA-252-5W+, designed for defense, communications, satellite, and test systems. The GNA-63-5W+ operates in the frequency range of 10 MHz to 6 GHz with a typical saturated output power of +38.5 dBm, 12 dB gain, and 35% power-added efficiency (PAE). On the other hand, the GNA-252-5W+ covers 10 MHz to 2.5 GHz with a typical saturated output power of +40 dBm, 13.5 dB gain, and 47% PAE. Both amplifiers are internally matched to 50 ohms, operate from a +28 V supply with 400 mA quiescent current, and support a wide temperature range of -55°C to +95°C, which helps in reducing external matching components, board space, and design time.
Filed Under: Communications
